Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A), L690
- https://doi.org/10.1143/jjap.28.l690
Abstract
The growth process in the initial stage of growth of Ge on (100)Si substrates by gas source molecular beam epitaxy using GeH4 has been investigated by in-situ reflection high-energy electron diffraction (RHEED) observation. It has been found that the growth mode is the Stranski-Krastanov type, and that the predominant facet of Ge islands is {811} planes at the first step of the island growth but changes to {311} planes with the growth.Keywords
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