The equivalent circuit model in solid-state electronics—Part II: The multiple energy level impurity centers

Abstract

In this paper, the equivalent circuit of a defect center with multiple energy levels in a semiconductor is formulated and applied to the calculation of the characteristic time constants of the multiple energy level system. Detailed numerical example of gold-doped silicon is given, including the constant characteristic time constant contour maps. The steady-state charge distribution ratio RN= Ns+1/Ns(s = charge state of the center) and recombination rate ratio RR(s) = RSS(s = ½)/(RSS(s-½) diagrams are developed and applied to the numerical calculations of the steady-state recombination and generation rate of electrons and holes in gold-doped silicon.