The origin of Schottky barriers on the cleavage plane of III–V semiconductors: Review of some recent theoretical work
- 1 June 1983
- journal article
- review article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (3-4), 301-316
- https://doi.org/10.1016/0040-6090(83)90570-9
Abstract
No abstract availableThis publication has 79 references indexed in Scilit:
- Angular-resolved photoemission from GaAs(110) surfaces with adsorbed AlSurface Science, 1981
- Column III and V elements on GaAs (110): Bonding and adatom-adatom interactionJournal of Vacuum Science and Technology, 1980
- The interaction of thin Au and Al overlayers with the GaAs(110) surfaceSurface Science, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Photoemission study of the interaction of Al with a GaAs (110) surfaceJournal of Electron Spectroscopy and Related Phenomena, 1979
- Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110)Journal of Vacuum Science and Technology, 1979
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Chemically Induced Charge Redistribution at Al-GaAs InterfacesPhysical Review Letters, 1979
- Metal–semiconductor surface and interface states on (110) GaAsJournal of Vacuum Science and Technology, 1978