Characterization of polysilicon-encapsulated local oxidation
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (5), 1085-1089
- https://doi.org/10.1109/16.129087
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Polysilicon encapsulated local oxidationIEEE Electron Device Letters, 1991
- A Bird's‐Beak‐Free Sealed‐Interface Local Oxidation Technology for Submicron Ultra‐Large‐Scale Integrated CircuitsJournal of the Electrochemical Society, 1990
- Crab‐Eye Formation in Poly‐Buffer LOCOS Isolation TechnologyJournal of the Electrochemical Society, 1990
- Field-implant-free isolation by double-well split drive-inIEEE Electron Device Letters, 1990
- Characterization of Poly‐Buffered LOCOS in Manufacturing EnvironmentJournal of the Electrochemical Society, 1989
- LOPOS: Advanced Device Isolation for a 0.8 μm CMOS/BULK Process TechnologyJournal of the Electrochemical Society, 1989
- Oxidation rate reduction in the submicrometer LOCOS processIEEE Transactions on Electron Devices, 1987
- A bird's beak reduction technique for LOCOS in VLSI FabricationIEEE Electron Device Letters, 1986
- Optimization of sidewall masked isolation processIEEE Transactions on Electron Devices, 1985
- The sloped-wall SWAMI—A defect-free zero bird's-beak local oxidation process for scaled VLSI technologyIEEE Transactions on Electron Devices, 1983