Waveguide formation in bulk GaAs and InP materials

3 January 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (1), 44-45
https://doi.org/10.1049/el:19850033

Abstract

Complex waveguiding structures can be fabricated in bulk materials by simply inducing patterned stresses in excess of 1010 dynes/cm2. We report on the first low-loss waveguides constructed in bulk GaAs and InP by this method.

Keywords

BULK MATERIALS
III-V SEMICONDUCTORS
LOW-LOSS WAVEGUIDES
PATTERNED STRESSES
WAVEGUIDING STRUCTURES
OPTICAL WAVEGUIDES

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