Alloying effects on the optical absorption edge of glow-discharge a-Si1-xGex: H
- 28 February 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 45 (7), 649-653
- https://doi.org/10.1016/0038-1098(83)90447-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981
- Dark conductivity and photoconductivity of hydrogenated amorphous Si1−xGex alloysJournal of Applied Physics, 1981
- Electronic Properties of Amorphous SixGe1−x:H FilmsPhysica Status Solidi (b), 1980
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow dischargeSolid State Communications, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Comments on the evidence for sharp and gradual optical absorption edges in amorphous germaniumPhysica Status Solidi (b), 1973
- The fundamental absorption of amorphous Ge, Si and GeSi alloysJournal of Non-Crystalline Solids, 1970
- Méthode de calcul des constantes optiques des couches minces absorbantes à partir de mesures de réflexion et de transmissionSurface Science, 1966