Dual ion implantation in ZnTe (O + Zn) interaction between solubility and stoichiometry
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 37 (3-4), 183-191
- https://doi.org/10.1080/00337577808233188
Abstract
The stoichiometry of compound semiconductors interacts with the solubility of impurities. Oxygen impurity in ZnTe is a good element for solubility studies because oxygen doped ZnTe exhibits a well characterized luminescence spectrum. It is shown that Zinc implantation in nominally undoped ZnTe brings out an oxygen-related luminescence spectrum, revealing some previously inactive oxygen impurities. Furthermore oxygen can be introduced in ZnTe by ion implantation but oxygen dissolution in Te sites is much more complete if a dual implantation (O + Zn) is carried out.Keywords
This publication has 10 references indexed in Scilit:
- Effect of dual implants into GaAsElectronics Letters, 1975
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973
- Photoluminescence of Ion-Implanted Oxygen in ZnTeJournal of Applied Physics, 1971
- The effect of annealing procedures on photoluminescence and electroluminescence in ZnTeJournal of Physics and Chemistry of Solids, 1971
- PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATIONApplied Physics Letters, 1969
- Isoelectronic Oxygen Trap in ZnTePhysical Review B, 1968
- New Electroluminescent Spectrum in ZnTe resulting from Oxygen IncorporationJournal of Applied Physics, 1967
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- "Mirror" Absorption and Fluorescence in ZnTePhysical Review Letters, 1962