1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

Abstract

We demonstrate a new low-threshold 1.5 μm single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.