ELECTROMIGRATION IN SINGLE-CRYSTAL ALUMINUM FILMS
- 15 January 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (2), 80-81
- https://doi.org/10.1063/1.1653108
Abstract
Electrical open circuits can be produced in current‐carrying polycrystalline aluminum thin film conductors as a result of electromigration phenomena. In this study, attempts have been made to induce such open circuits in comparable single‐crystal aluminum thin‐film conductors. It has not been possible to do so even after subjecting the latter to relatively high current densities for more than 10 000h. This observation adds strong support to the previous inference that the formation of electromigration‐induced open circuits in polycrystalline aluminum thin film conductors is caused predominantly by diffusion along grain boundaries.Keywords
This publication has 6 references indexed in Scilit:
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- Electromigration in Thin Al FilmsJournal of Applied Physics, 1969
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968
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- Diffusion of Al26 and Mn54 in AluminumJournal of Applied Physics, 1962