Doping- and pressure-induced change of electrical and magnetic properties in the Mott-Hubbard insulator
- 1 October 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (13), 9677-9683
- https://doi.org/10.1103/physrevb.48.9677
Abstract
A perovskitelike compound shows insulating or barely metallic behavior depending on a slight (≤0.04) deviation of the Ti valence (+3) arising from nonstoichiometry of La and/or oxygen. In order to investigate electronic properties of the specimens in the very vicinity of the Mott insulator-metal phase boundary, we have measured the doping- and pressure-induced effects on the electrical and magnetic properties. The results have indicated a crossover behavior from localized to itinerant nature of the electronic state with increase of the doping level and one-electron bandwidth.
Keywords
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