An overview of radiation-induced interface traps in MOS structures
- 1 December 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (12), 986-999
- https://doi.org/10.1088/0268-1242/4/12/004
Abstract
No abstract availableKeywords
This publication has 83 references indexed in Scilit:
- Recombination along the tracks of heavy charged particles in SiO2 filmsJournal of Applied Physics, 1985
- Correlation of Radiation Effects in Transistors and Integrated CircuitsIEEE Transactions on Nuclear Science, 1985
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984
- Comparison of 60Co Response and 10 KeV X-Ray Response in MOS CapacitorsIEEE Transactions on Nuclear Science, 1983
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Role Transport and Charge Relaxation in Irradiated SiO2 MOS CapacitorsIEEE Transactions on Nuclear Science, 1975
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Charge-Carrier Transport Phenomena in Amorphous Si: Direct Measurement of the Drift Mobility and LifetimePhysical Review Letters, 1973
- Effect of Electron Irradiation on Carrier Mobilities in Inversion Layers of Insulated Gate Field Effect TransistorsIEEE Transactions on Nuclear Science, 1967