Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wells
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (18), 9867-9870
- https://doi.org/10.1103/physrevb.35.9867
Abstract
The electronic states of an InAs quantum well buried a few tens of nm below a GaSb surface are described, assuming Fermi-level pinning in the lower part of the gap at this surface. This model accounts satisfactorily for a variety of experimental observations such as the imbalance of electron and hole concentrations, the relatively high electron mobility, and the appearance of quantum-Hall plateaus. Additional cyclotron-resonance measurements are also consistent with the proposed electronic structure.Keywords
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