New tight-binding model of silicon for theoretical studies of surfaces
- 1 January 1990
- Vol. 41 (1-3), 612-614
- https://doi.org/10.1016/0042-207x(90)90432-x
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Structural stability of silicon in tight-binding modelsJournal of Physics C: Solid State Physics, 1987
- Crystal Stability and Structural Transition Pressures of-Bonded SolidsPhysical Review Letters, 1986
- Calculation of Magic Numbers and the Stability of Small Si ClustersPhysical Review Letters, 1986
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- Si(100) surfaces: Atomic and electronic structuresJournal of Vacuum Science and Technology, 1979
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979
- Tight‐binding calculations of the valence bands of diamond and zincblende crystalsPhysica Status Solidi (b), 1975
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Tight-binding calculations of surface states of Si(111)Solid State Communications, 1974