High Conducting Large Area Indium Tin Oxide Electrodes for Displays Prepared by DC Magnetron Sputtering
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A), L149
- https://doi.org/10.1143/jjap.30.l149
Abstract
High conducting ITO films were deposited by DC magnetron sputtering using ITO targets. At substrate temperatures of 200°C and 300°C ITO films were reproducibly prepared with resistivities of 1.9×10-4 Ω·cm respectively 1,4×10-4 Ω·cm at a deposition rate of 20 Å/s. ITO films prepared at room temperature show after annealing at 200°C in air, nitrogen or vacuum the same low resistivity of 1.9×10-4 Ω·cm when using optimum sputtering conditions. The influence of the deposition temperature on the electrical, optical and etching properties was studied and related to the structure of the ITO films. Details on an optimized in line sputtering system for the economic large scale production of ITO films are presented.Keywords
This publication has 3 references indexed in Scilit:
- DC magnetron sputtered ITO films applied with indium tin oxide targets.SHINKU, 1987
- The effect of annealing on the optical properties of indium tin oxide filmsThin Solid Films, 1984
- Transparent conductors—A status reviewThin Solid Films, 1983