The growth of GaAs on Si by MBE
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 205-213
- https://doi.org/10.1016/0022-0248(87)90392-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on siliconJournal of Applied Physics, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- A dc and microwave comparison of GaAs MESFET's on GaAs and Si substratesIEEE Transactions on Electron Devices, 1986
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984