Birefringent bistability in (Pb,La)(Zr,Ti)O3 thin films with a ferroelectric-semiconductor interface
- 27 September 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (13), 1730-1732
- https://doi.org/10.1063/1.110697
Abstract
We report a birefringent bistability exhibited in ferroelectric thin films with a ferroelectric‐semiconductor interface. Such birefringent bistability is observed in (Pb,La)(Zr,Ti)O3 (PLZT) thin films which are sandwiched between a platinum and a semiconducting indium‐tin oxide (ITO) electrode. The magnitude of the birefringence between the two remanent states is approximately 0.9×10−3. The Pt/PLZT/ITO structure features a nonvolatile electro‐optic memory operation, i.e., the switching between the two remanent birefringent states with bipolar electric pulses.Keywords
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