The effect of silicon vacancies on the electron structure of yttrium disilicide
- 15 June 1992
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 4 (24), 5399-5404
- https://doi.org/10.1088/0953-8984/4/24/009
Abstract
Ab initio calculations of the electronic structure of yttrium disilicide have been performed using the LMTO-ASA method (linear muffin-tin orbitals in the atomic sphere approximation). Two different cases have been investigated: stoichiometric YSi2 and silicon-deficient YSi1.7 where one silicon atom out of every six is missing. The authors show that the main effect of these vacancies is to shift the Fermi level towards a region of much lower density, thus stabilizing the structure.Keywords
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