Electronically controlled reactions of interstitial iron in silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3), 297-300
- https://doi.org/10.1016/0378-4363(83)90263-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957