Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers
- 1 September 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (9), 773-776
- https://doi.org/10.1109/68.84488
Abstract
Optical-confinement-factor Gamma dependencies of the K factor, differential gain, dg/dN, and nonlinear gain coefficient epsilon , for 1.55 mu m InGaAs/InGaAsP multiple-quantum-well (MQW) and compressively strained MQW lasers, were investigated experimentally. For both MQW and strained-MQW lasers, when Gamma is increased, the K factor is reduced, dg/dN is increased, but epsilon is almost constant. These results indicate that the Gamma dependence of the K factor mainly results from a change in dg/dN, and does not result from a change in epsilon . For the strained MQW lasers, the K factor, dg/dN, and epsilon are, respectively, half as large, twice as large, and the same as those for the MQW lasers, when both types of lasers have the same Gamma (=0.05). This suggests that the strained MQW lasers with a large Gamma have a small K factor and thus are preferable for achieving large modulation bandwidths.<>Keywords
This publication has 11 references indexed in Scilit:
- A new density matrix theory for semiconductor lasers, including non-Markovian intraband relaxation and its application to nonlinear gainIEEE Journal of Quantum Electronics, 1991
- Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasersApplied Physics Letters, 1991
- Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasersApplied Physics Letters, 1991
- Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wellsElectronics Letters, 1991
- The relation of doping level to K factor and the effect on ultimate modulation performance of semiconductor lasersIEEE Photonics Technology Letters, 1990
- Extremely high-frequency (24 GHz) InGaAsP diode lasers with excellent modulation efficiencyElectronics Letters, 1990
- Theory and experiment of the parasitic-free frequency response measurement technique using facet-pumped optical modulation in semiconductor diode lasersApplied Physics Letters, 1989
- Intensity noise in 1.5[micro sign]m GaInAs quantum well buried heterostructure lasersElectronics Letters, 1989
- Measurement of intrinsic frequency response of semiconductor lasers using optical modulationElectronics Letters, 1988
- Analysis of gain suppression in undoped injection lasersJournal of Applied Physics, 1981