Distribution and Cross-Sections of Fast States on Germanium Surfaces
- 1 September 1956
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 35 (5), 1041-1058
- https://doi.org/10.1002/j.1538-7305.1956.tb03817.x
Abstract
A theoretical treatment of the field effect, surface photo-voltage and surface recombination phenomena has been carried out, starting with the Hall-Shockley-Read model and generalizing to the case of a continuous trap distribution. The theory is appl...Keywords
This publication has 7 references indexed in Scilit:
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- Trapping of Minority Carriers in Silicon. I.-Type SiliconPhysical Review B, 1955
- Measurements of the recombination velocity at germanium surfacesPhysica, 1954
- Effect of Nickel and Copper Impurities on the Recombination of Holes and Electrons in GermaniumThe Journal of Physical Chemistry, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952