A fast atom bombardment sputter deposition (FAB-SD) method is proposed for the formation of MoS2 solid lubricant films and to control their stoichiometry. In the FAB-SD process, the charging of targets is not a serious problem. The beams in a McIlraith-type ion source are demonstrated to be capable of almost full neutralization. An Mo–S complex target is used for the purpose of stoichiometric control in the sputtering. Durability and friction coefficients of films deposited using this target are superior to those of films deposited using a conventional MoS2 target. The friction coefficient of the annealed film deposited using the Mo–S complex target is less than 0.05.