Properties of Excitons Bound to Ionized Donors
- 15 July 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 4 (2), 512-517
- https://doi.org/10.1103/physrevb.4.512
Abstract
Binding energies, interparticle distances, oscillator strengths, and exchange corrections are calculated for the three-particle complex corresponding to an exciton bound to an ionized donor. The results are given as functions of the mass ratio of the electron and hole. Binding of the complex is obtained for mass ratios up to 0.426. The interparticle distances are up to 50 times larger than the corresponding exciton radius. The oscillator strengths are about times greater than those of free excitons, while the exchange corrections for the complex are comparable to those of free excitions. The results are applied to CdS and ZnO and compared with experimental results on these.
Keywords
This publication has 14 references indexed in Scilit:
- Lifetimes of Bound Excitons in CdSPhysical Review B, 1970
- Excitons bound to ionized donorsPhysics Letters A, 1969
- Use of Asymptotically Correct Wave Function for Three-Body Rayleigh-Ritz CalculationsPhysical Review B, 1969
- Possibility of Exciton Binding to Ionized Impurities in SemiconductorsPhysical Review B, 1969
- Generation of the Exciton-Impurity Complex by Fast ElectronsPhysica Status Solidi (b), 1969
- Excitons bound to charged donorsPhysics Letters A, 1967
- Theory of Excitons Bound to Ionized Impurities in SemiconductorsPhysical Review B, 1967
- Band parameters of semiconductors with zincblende, wurtzite, and germanium structureJournal of Physics and Chemistry of Solids, 1963
- Optical Properties of Bound Exciton Complexes in Cadmium SulfidePhysical Review B, 1962
- Fine Structure and Magneto-Optic Effects in the Exciton Spectrum of Cadmium SulfidePhysical Review B, 1961