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Structures Grown by Molecular Beam Epitaxy
Home
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Structures Grown by Molecular Beam Epitaxy
Structures Grown by Molecular Beam Epitaxy
LC
L. L. Chang
L. L. Chang
LE
L. Esaki
L. Esaki
WH
W. E. Howard
W. E. Howard
RL
R. Ludeke
R. Ludeke
GS
G. Schul
G. Schul
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1 September 1973
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science and Technology
Vol. 10
(5)
,
655-662
https://doi.org/10.1116/1.1318408
Abstract
The process of molecular beam epitaxy is described, and its application to compound semiconductors is discussed. Growths and properties of GaAs and GaAs-GaAlAs superlattice are presented.
Keywords
STRUCTURES
GROWN
GAALAS
SUPERLATTICE
SEMICONDUCTORS
COMPOUND
GAAS
BEAM EPITAXY
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Cited by 130 articles