Low noise metamorphic HEMT devices and amplifiers on GaAs substrates
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 105-108
- https://doi.org/10.1109/mwsym.1999.779435
Abstract
Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs metamorphic HEMTs on a GaAs substrate. These devices have been used to design and fabricate microwave and millimeter wave amplifiers. Amplifier results are presented.Keywords
This publication has 3 references indexed in Scilit:
- AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: from material to devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-noise, high-speed Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As 0.1-μm MODFETs and high-gain/bandwidth three-stage amplifier fabricated on GaAs substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InAlAs/InGaAs metamorphic low-noise HEMTIEEE Microwave and Guided Wave Letters, 1997