Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach
- 8 October 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (No. 11A), L1413-L1415
- https://doi.org/10.1143/jjap.43.l1413