Laser-induced microscopic etching of GaAs and InP
- 15 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8), 698-700
- https://doi.org/10.1063/1.91597
Abstract
Ultraviolet laser photolysis of methyl‐halides has been used to produce localized photoetching of GaAs and InP. A spatial resolution of ≃1μm has been achieved and an etch rate ≳104 times that of the dark reaction demonstrated. A chemical mechanism is proposed and the observed resolution is explained by a simple physical model.Keywords
This publication has 7 references indexed in Scilit:
- Laser photodeposition of metal films with microscopic featuresApplied Physics Letters, 1979
- Effect of the laser radiation intensity on the kinetics of the heterogeneous photochemical reaction between single-crystal germanium and bromine gasSoviet Journal of Quantum Electronics, 1978
- A preliminary study of dislocations in indium and gallium phosphidesJournal of Materials Science, 1973
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972
- Photochemical Processes in Halogenated CompoundsPublished by Wiley ,1964
- The photolysis of methyl halides in the presence of metals. Part 1.—Methyl iodideTransactions of the Faraday Society, 1959
- On the Recombination of Iodine and Bromine AtomsThe Journal of Chemical Physics, 1941