Photocollection efficiency and interface charges of MBE-grown abrupt p (GaAs) -N (Al0.33Ga0.67As) heterojunctions
- 15 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (8), 749-751
- https://doi.org/10.1063/1.90527
Abstract
The photocollection efficiency of abrupt p (GaAs) ‐N (AlxGa1−xAs) heterojunctions is found to be far too large to be compatible with the unmodified Shockley‐Anderson model. The results are interpreted by postulating a positive interface charge density σ≃6×1011 cm−2.Keywords
This publication has 5 references indexed in Scilit:
- Auger profiling studies of LPE n-AlxGa1−xAs–n-GaAs heterojunctions and the absence of rectificationJournal of Vacuum Science and Technology, 1978
- A simplified model for graded-gap heterojunctionsSolid-State Electronics, 1975
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963