Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodes

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Abstract
The transport of carriers across the semiconductor space-charge region of a forward-biased Schottky-barrier diode is investigated by a Monte Carlo simulation of the transport process. The electron distribution function at the m.s. boundary turns out to be hemi-Maxwellian, but the electron concentration is about one-half of that predicted by the t.d. theory.