Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001)–SiO_2 interface
- 15 June 1997
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 22 (12), 901-903
- https://doi.org/10.1364/ol.22.000901
Abstract
Carrier-induced screening of the dc electric field at the Si(001)–SiO2 interface is observed by intensity-dependent and femtosecond-time-resolved second-harmonic spectroscopy. The screening occurs on a time scale of , the reciprocal plasma frequency of the generated carriers.
Keywords
This publication has 9 references indexed in Scilit:
- Electron Photoinjection from Silicon to Ultrathin SiFilms via Ambient OxygenPhysical Review Letters, 1996
- Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structurePhysical Review B, 1996
- Optical second-harmonic generation as a probe of electric-field-induced perturbation of centrosymmetric mediaOptics Letters, 1995
- Analysis of second-harmonic generation by unamplified, high-repetition-rate, ultrashort laser pulses at Si(001) interfacesIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Time-resolved optical second harmonic generation measurements of picosecond band flattening processes at single crystal TiO2 electrodesThe Journal of Physical Chemistry, 1994
- Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1−xGexApplied Physics Letters, 1993
- Depletion-electric-field-induced changes in second-harmonic generation from GaAsPhysical Review Letters, 1993
- /Si interfacial structure on vicinal Si(100) studied with second-harmonic generationPhysical Review B, 1993
- Nonlinear Electroreflectance in Silicon and SilverPhysical Review Letters, 1967