Dislocation states in gallium arsenide
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 39 (1), 21-25
- https://doi.org/10.1080/13642817908245347
Abstract
The continued fraction method is used to study the electronic states associated with the 60° dislocations in gallium arsenide. Details of the cation and anion dislocation bands are given and the effects of the net dislocation core charge on the states emphasized.Keywords
This publication has 14 references indexed in Scilit:
- Electronic states associated with the sixty-degree edge dislocation in germaniumPhilosophical Magazine, 1977
- The electron states associated with the core region of the 60° dislocation in siliconPhysica Status Solidi (b), 1977
- Electronic states associated with the 60° edge dislocation in siliconPhilosophical Magazine, 1977
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Tight‐binding calculations of the valence bands of diamond and zincblende crystalsPhysica Status Solidi (b), 1975
- Dissociation of near-screw dislocations in germanium and siliconPhilosophical Magazine, 1975
- Intrinsic surface states of (110) surfaces of group IV and III-V semiconductorsPhysical Review B, 1974
- Extended dislocations in germaniumPhilosophical Magazine, 1973
- Electronic structure based on the local atomic environment for tight-binding bandsJournal of Physics C: Solid State Physics, 1972
- Defects in the sphalerite structureJournal of Physics and Chemistry of Solids, 1962