Analysis of hall measurements on ZnSiP2
- 16 February 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 21 (2), 639-647
- https://doi.org/10.1002/pssa.2210210229
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Optical absorption edges of compound semiconductors in the ZnSiP2-ZnSiAs2rangeJournal of Physics C: Solid State Physics, 1973
- Energy band structure and modulation spectra of A2B4C25 semiconductorsSurface Science, 1973
- Band Structure of ZnGeand ZnSi— Ternary Compounds with Pseudodirect Energy GapsPhysical Review Letters, 1973
- On an Approximation for the Energy Gap at Γ of A2 B4 C52 Compounds with Chalcopyrite StructurePhysica Status Solidi (b), 1973
- Structural dependence of birefringence in the chalcopyrite structure. Refinement of the structural parameters of ZnGeP2 and ZnSiAs2The Journal of Chemical Physics, 1973
- The Lowest Conduction Band Minima of A2B4C‐Type SemiconductorsPhysica Status Solidi (b), 1972
- Optical properties of II–IV–V2 and I–III–VI2 crystals with particular reference to transmission limitsPhysica Status Solidi (a), 1972
- Sharp-Line Photoluminescence in ZnSiPhysical Review B, 1970
- Recombination Radiation Spectra in ZnSiP2 CrystalsPhysica Status Solidi (b), 1969
- Growth of some single crystal II–IV–V2 semiconducting compoundsJournal of Crystal Growth, 1968