Nitrogen as dopant in silicon and germanium
- 16 May 1976
- journal article
- review article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (1), 11-36
- https://doi.org/10.1002/pssa.2210350102
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973
- Infrared Studies of SiC, Si3N4, and SiO2 Formation in Ion-Implanted SiliconPublished by Springer Nature ,1971
- Nitrogen-ion implantation onp-silicon in the energy range between 20 and 215 keVIl Nuovo Cimento B (1971-1996), 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968
- Impurity distribution profiles in ion-implanted siliconCanadian Journal of Physics, 1968
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Theory of Diffusion and Equilibrium Position of Interstitial Impurities in the Diamond LatticePhysical Review B, 1962
- Nitrogen in SiliconJournal of Applied Physics, 1959