Vibrational Properties of MixedCdSxSe1x

Abstract
An investigation of the effects of heavy doping has been carried out in the case of the system CdSxSe1x. For CdS containing a low concentration of Se, the dopant acts as a heavy impurity and gives a gap mode at ωGEIIc=182.5 cm1 and ωGEc=187 cm1. An increase in the Se concentration brings into prominence two constitutents of the ωG band having, respectively, the character of a longitudinal mode ωLOG and a transverse mode ωTOG. The frequencies ωLOG and ωTOG are dependent on the impurity concentration and tend toward the normal-mode frequencies of CdSe in the high-concentration limit. S in CdSe gives two localized modes, ωLEIIc=266.5 cm1 and ωLEc=269 cm1, whose frequencies are also concentration-dependent and at high S concentration reach the normal-mode frequencies for CdS. The localized-mode frequencies of S in CdSe and the resonance-mode frequencies of Se in CdS have been investigated by Green's-function techniques. A model assuming a random arrangement of impurities, developed by Elliott and Taylor, has been applied to the study of mixed CdSxSe1x, using the now available CdS Green's function. Up to an impurity concentration of 20%, the calculated optical properties (such as the normal-mode and impurity-mode frequency shift, oscillator strength, and absorption coefficient) compare satisfactorily with the experimental data.

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