Generalized energy-momentum conservation equations in the relaxation time approximation
- 30 September 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (9), 913-917
- https://doi.org/10.1016/0038-1101(87)90127-4
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Two-dimensional transient simulation of an idealized high electron mobility transistorIEEE Transactions on Electron Devices, 1985
- Electrical current and carrier density in degenerate materials with nonuniform band structureProceedings of the IEEE, 1984
- Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximationsJournal of Applied Physics, 1981
- Differential relaxation times and diffusivities of hot carriers in isotropic semiconductorsJournal of Applied Physics, 1977
- Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistorsElectronics Letters, 1976
- Computer simulation of transferred electron devices using the displaced Maxwellian approachIEEE Transactions on Electron Devices, 1974
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962