Optimization of planar Be-doped InGaAs VCSEL's with two-sided output
- 1 July 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (7), 730-732
- https://doi.org/10.1109/68.393188
Abstract
Threshold current, output power, wall-plug efficiency and operating voltage of epitaxially grown InGaAs-AlGaAs planar vertical-cavity surface-emitting lasers (VCSEL's) are strongly influenced by the electrical and optical properties of the p-doped Bragg reflector. Here we study in some detail the dependence of output behavior on the composition, interface grading, and modulation doping of the Be-doped AlGaAs-GaAs Bragg reflector. Using optimized p-doped mirrors VCSEL's with low threshold current densities of 300 A/cm/sup 2/, low driving voltages of 1.6 V and high wall-plug efficiencies of 17.6% are obtained. Transverse single-mode emitting devices show a record low emission linewidth of 30 MHz and a linewidth-power product of 2.2 mW/spl middot/MHz.Keywords
This publication has 8 references indexed in Scilit:
- Planar proton implanted VCSEL's and fiber-coupled 2-D VCSEL arraysIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxyIEEE Photonics Technology Letters, 1994
- Low threshold current density InGaAs surface-emitting lasers with periodic gain active structureElectronics Letters, 1994
- 17.3% peak wall plug efficiency vertical-cavity surface-emitting lasers using lower barrier mirrorsIEEE Photonics Technology Letters, 1994
- Transverse mode control of vertical-cavity top-surface-emitting lasersIEEE Photonics Technology Letters, 1993
- N- and P-type dopant profiles in distributed Bragg reflector structures and their effect on resistanceApplied Physics Letters, 1992
- Potential barriers and current-voltage characteristics of p-doped graded AlAs-GaAs heterojunctionsJournal of Applied Physics, 1992
- Elimination of heterojunction band discontinuities by modulation dopingApplied Physics Letters, 1992