Quantitative measurement with high time resolution of internal waveforms on MOS RAMs using a modified scanning electron microscope
- 1 June 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (3), 319-325
- https://doi.org/10.1109/jssc.1978.1051047
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Two-dimensional observation of Gunn domains at 1 GHz by picosecond pulse stroboscopic SEMApplied Physics Letters, 1977
- Estimate of minimum measurable voltage in the SEMJournal of Physics E: Scientific Instruments, 1977
- Internal waveform measurements of the MOS three-transistor, dynamic RAM using S.E.M. stroboscopic techniquesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- A 1-mil/SUP 2/ single-transistor memory cell in n silicon-gate technologyIEEE Journal of Solid-State Circuits, 1973
- Conductivity Induced by Electron Bombardment in Thin Insulating FilmsPhysical Review B, 1949