Polysilicon transistors fabricated on plasma-deposited amorphous silicon
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (5), 708-710
- https://doi.org/10.1109/16.2519
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon filmsIEEE Electron Device Letters, 1987
- Effects of H+implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristicsIEEE Electron Device Letters, 1987
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)Japanese Journal of Applied Physics, 1986
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985
- Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride sourceIEEE Electron Device Letters, 1984