Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10), 1116-1118
- https://doi.org/10.1063/1.95037
Abstract
Amorphous surface layers produced by ion bombardment in silicon on sapphire have been ion beam annealed at 300 °C. The annealing behavior has been found to be dependent on the part of the ion energy transferred in nuclear collisions.Keywords
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