Faceting at the silicon (100) crystal-melt interface: Theory and experiment
- 13 January 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (2), 155-158
- https://doi.org/10.1103/physrevlett.56.155
Abstract
Molecular-dynamics simulations and in situ experimental observations of the melting and equilibrium structure of the crystalline Si(100)-melt interface are described. The equilibrium interface is structured, exhibiting facets established on (111) planes.Keywords
This publication has 6 references indexed in Scilit:
- Pattern Formation Resulting from Faceted Growth in Zone-Melted Thin FilmsPhysical Review Letters, 1985
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- New Molecular-Dynamics Method for Metallic SystemsPhysical Review Letters, 1985
- Ising Model Simulations Of Impurity Trapping in SiliconMRS Proceedings, 1982
- Crystal Structure and Pair Potentials: A Molecular-Dynamics StudyPhysical Review Letters, 1980
- Instabilities and pattern formation in crystal growthReviews of Modern Physics, 1980