Transistor action in Si/CoSi2/Si heterostructures

Abstract

We report transistor action in a Si/CoSi₂/Si structure. The thin silicide layer (<100 Å), which acts as the base, is a single‐crystal metal, essentially continuous and locally exhibiting atomically perfect interfaces with Si. The transistor action is manifested by a common base current gain α as high as 0.6 and a voltage gain greater than 10.