Characterization of Tantalum Nitride Thin Films Fabricated by Pulsed Nd:YAG Laser Deposition Method
- 1 April 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (4R)
- https://doi.org/10.1143/jjap.40.2391
Abstract
Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.Keywords
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