Modeling and simulation of insulated-gate field-effect transistor switching circuits
- 1 September 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 3 (3), 285-289
- https://doi.org/10.1109/jssc.1968.1049902
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Computer-aided design and characterization of MOS integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1968
- The Charge-Control Concept in the Form of Equivalent Circuits, Representing a Link Between the Classic Large Signal Diode and Transistor ModelsBell System Technical Journal, 1967
- Computer models of the field-effect transistorProceedings of the IEEE, 1967
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- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- Design theory of a surface field-effect transistorSolid-State Electronics, 1964