Diffusion of oxygen in silicon

Abstract

Recently reported measurements of oxygen diffusion in silicon agree within experimental accuracy with a previous estimate D=0.23 exp(−2.561±0.005 eV/kT) cm2 s−1, determined from a direct measurement at lower temperatures of the one-jump process for interstitial oxygen from one Si-Si bond to an adjacent one. The diffusion constant is therefore known over 11 decades and results from a single microscopically identified process. There are few such model textbook examples for diffusion in solids.