Design of polarization-insensitive ring resonators in silicon-on-insulator using MMI couplers and cladding stress engineering
- 3 January 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 18 (2), 343-345
- https://doi.org/10.1109/lpt.2005.861973
Abstract
A novel silicon-on-insulator (SOI) ring resonator design is described that uses a 2 /spl times/ 2 multimode interference coupler to achieve polarization-independent coupling, and cladding stress induced birefringence control to eliminate the difference in round-trip phase accumulation between the transverse-electric and transverse-magnetic polarized modes. The design parameters are determined for polarization-independent SOI ring resonators with couplers having a 50 : 50 or 15 : 85 splitting ratio, and 1.5-/spl mu/m ridge height and width. As designed, the resonators offer a polarization-independent free-spectral range of 0.5 nm for a ring radius of 200 /spl mu/m, and a quality factor Q as high as 55 000.Keywords
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