High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy
- 27 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17), 1112-1114
- https://doi.org/10.1063/1.97438
Abstract
The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy. These devices are characterized by high current gain, β∼1100, only weakly dependent on the collector current. The current-voltage characteristics of the emitter base junction exhibit an ideality factor n=1.2 over a wide bias range.Keywords
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