Lattice distortion in LPE Ga1−xAlxAs layers
- 1 April 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 38 (1), 143-144
- https://doi.org/10.1016/0022-0248(77)90386-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Misorientation and tetragonal distortion in heteroepitaxial vapor-Grown III–V structuresPhysica Status Solidi (a), 1975
- X-ray study of AlxGa1−xAs epitaxial layersPhysica Status Solidi (a), 1975
- Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAsJournal of Crystal Growth, 1974
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- Thermal Expansion of AlAsJournal of Applied Physics, 1970