Pd–thin-SiO2–Si diode. I. Isothermal variation of H2-induced interfacial trapping states

Abstract

The current‐voltage characteristic and the small‐signal frequency‐dependent admittance response of Pd–thin‐SiO₂–Si diodes are measured. It is found that the characteristics undergo reversible changes by switching the ambient gas between hydrogen diluted in nitrogen and pure oxygen. Dispersive peaks and structures are observed in the C‐V and G‐V plots obtained under hydrogen which are absent under oxygen. It is concluded that hydrogen‐generated interfacial trapping states are responsible for the induced electrical changes in the Pd–thin‐SiO₂–Si diodes.