Magnetoresistivity tensor components at intermediate magnetic fields in quenched and annealed bismuth

Abstract

Measurements have been made at 77 K of the magnetoresistivity tensor components rho ₁₁(B₁), rho ₁₁(B₃) and rho ₂₁(B₃) of annealed and quenched bismuth between 0.025 T and 0.50 T. Results have been fitted to expressions derived by Aubrey for the magnetoconductivity tensor in the classical range of magnetic fields. The values obtained for the electron and hole mobility tensor components, the carrier densities and the tilt angle of the valence band Fermi ellipsoids are in agreement with those calculated from the twelve coefficients of the low field magnetoresistivity tensor. It is concluded that measurement of the magnetoresistivity tensor components at intermediate magnetic fields is of great value in the study of quenching effects in bismuth: all the model parameters can be found from one sample. Previous findings of the effects of quenching on the model parameters are confirmed; the carrier density in both bands, in particular that of the holes, is increased by the introduction of quenched in defects.