Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE
- 1 January 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (3), 113-115
- https://doi.org/10.1049/el:19810081
Abstract
Room temperature pulsed operation has been achieved in the 1.2–1.3 μm region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.Keywords
This publication has 1 reference indexed in Scilit:
- Low Pressure Organometallic Growth of Chromium-Doped GaAs Buffer LayersPublished by Springer Nature ,1980