Large Magnetoresistance Effect Due to Spin Injection into a Nonmagnetic Semiconductor
- 12 November 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 87 (22), 227203
- https://doi.org/10.1103/physrevlett.87.227203
Abstract
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of , when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to magnetoresistance.
Keywords
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